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Assuming an operating temperature T = 300K and =26 mV. What is the change in semi-conductor silicon diode forward voltage to produce a 10:1 change in dioide current while operating in the forward bias region (<25mA)?a)60 mVb)120 mVc)180 mVd)240 mVCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Assuming an operating temperature T = 300K and =26 mV. What is the change in semi-conductor silicon diode forward voltage to produce a 10:1 change in dioide current while operating in the forward bias region (<25mA)?a)60 mVb)120 mVc)180 mVd)240 mVCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Assuming an operating temperature T = 300K and =26 mV. What is the change in semi-conductor silicon diode forward voltage to produce a 10:1 change in dioide current while operating in the forward bias region (<25mA)?a)60 mVb)120 mVc)180 mVd)240 mVCorrect answer is option 'B'. Can you explain this answer?.

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