C because n type semiconductor have majority of electron
the simple trik to learn is n -type mean negetivly charged then majority of electron or p-type mean positively charged then majority of holls

Introduction:
In this question, we are asked to identify the statement that is NOT true among the given options. The statements are related to semiconductors and their behavior. Let's analyze each statement to determine which one is false.

Analysis:
a) The resistance of intrinsic semiconductor decreases with an increase in temperature:
This statement is true. Intrinsic semiconductors are pure semiconducting materials with no impurities. In an intrinsic semiconductor, the number of electrons and holes is equal. As the temperature increases, more electrons and holes are generated due to thermal excitation. This increases the conductivity of the material, resulting in a decrease in resistance.

b) Doping pure Si with trivalent impurities gives p-type semiconductor:
This statement is true. Doping refers to the process of adding impurities to a pure semiconductor to modify its electrical properties. When trivalent impurities (such as boron) are added to pure silicon (which is a tetravalent material), they create holes in the crystal lattice. These holes act as majority charge carriers, leading to the formation of a p-type semiconductor.

c) The majority carriers in n-type semiconductors are holes:
This statement is false. In an n-type semiconductor, the majority carriers are electrons, not holes. N-type semiconductors are created by doping pure semiconductors (such as silicon) with pentavalent impurities (such as phosphorus). These impurities introduce extra electrons into the crystal lattice, which become the majority charge carriers.

d) A p-n junction can act as a semiconductor diode:
This statement is true. A p-n junction is formed when a p-type semiconductor is joined with an n-type semiconductor. At the junction, diffusion of majority carriers (holes from the p-side and electrons from the n-side) occurs. This leads to the formation of a depletion region, creating an electric field. This electric field prevents further diffusion of carriers and establishes a potential barrier. This potential barrier acts as a diode, allowing current to flow in one direction (forward bias) and blocking it in the opposite direction (reverse bias).

Conclusion:
Among the given statements, the false statement is c) The majority carriers in n-type semiconductors are holes. In n-type semiconductors, the majority carriers are electrons.