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The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are
  • a)
    Drift in forward bias diffusion in reverse bias
  • b)
    Diffusion in forward bias drift in reverse bias
  • c)
    Diffusion in both forward and reverse bias
  • d)
    Drift in both forward and reverse bias
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
The dominant mechanisms for motion of charge carriers in forward and r...
In forward biased p-n junction, the motion of carriers is caused by diffusion while in reversed based, it is became of drift.
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The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions area)Drift in forward bias diffusion in reverse biasb)Diffusion in forward bias drift in reverse biasc)Diffusion in both forward and reverse biasd)Drift in both forward and reverse biasCorrect answer is option 'B'. Can you explain this answer?
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