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For an ideal p-channel MOSFET, μp = 300cm2/v-s, W = 15μm, L = 1.5μm, tox = 300A, Vt = -0.7V. If the transistor is non-saturation region at VSD = 0.5V, then what is the Transconductance gm?
  • a)
    0.172mS
  • b)
    0.501mS
  • c)
    0.242mS
  • d)
    148mS
Correct answer is option 'A'. Can you explain this answer?
Verified Answer
For an ideal p-channel MOSFET, μp = 300cm2/v-s, W = 15μm, L = 1.5μm, ...
ID = (μpCox/2)(W/L)(2(VSG+VT)VSD-VSD2)2,
where
Cox = (3.9 x 85 x 1014)/(300 x 1010).
Cox = 1.15 x 10-7 F/m2. Also, gm = ∂(ID)/∂(VSG).
On substituting and solving, gm = 0.172mS.
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For an ideal p-channel MOSFET, μp = 300cm2/v-s, W = 15μm, L = 1.5μm, tox = 300A, Vt = -0.7V. If the transistor is non-saturation region at VSD = 0.5V, then what is the Transconductance gm?a)0.172mSb)0.501mSc)0.242mSd)148mSCorrect answer is option 'A'. Can you explain this answer?
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