Question Description
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer?.

Solutions for Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer?, a detailed solution for Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? has been provided alongside types of Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.a)30.6b)30.7Correct answer is between '30.6,30.7'. Can you explain this answer? tests, examples and also practice GATE tests.