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A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared
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the GATE exam syllabus. Information about A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam.
Find important definitions, questions, meanings, examples, exercises and tests below for A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer?.
Solutions for A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE.
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Here you can find the meaning of A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer?, a detailed solution for A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? has been provided alongside types of A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s = 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V)a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? tests, examples and also practice GATE tests.