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An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ?
x is found to be 14. Can anyone explain me how?
x is found to be 14. Can anyone explain me how?
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An n–type silicon sample is uniformly illuminated with light which gen...
**Given Data:**
- Illumination generates 1020 electron-hole pairs per cm3 per second.
- Minority carrier lifetime in the sample is 1 s.
**Objective:**
To find the value of x, where x is an integer, representing the hole concentration in the steady state.
**Explanation:**
1. The steady state condition is achieved when the rate of generation of electron-hole pairs is equal to the rate of recombination of electron-hole pairs.
2. In the given problem, the rate of generation of electron-hole pairs is given as 1020 pairs/cm3/s.
3. Let's assume the hole concentration in the steady state is n.
4. The rate of recombination of electron-hole pairs is given by the equation: recombination rate = (number of electron-hole pairs) / (minority carrier lifetime).
5. The rate of recombination of holes is given by the equation: recombination rate = n / (minority carrier lifetime).
6. Equating the rate of generation and the rate of recombination, we have: 1020 pairs/cm3/s = n / 1s.
7. Solving the equation for n, we get: n = 1020 pairs/cm3/s.
8. Therefore, the hole concentration in the steady state is approximately 1020 cm-3.
9. We need to express the hole concentration in the form of 10x, where x is an integer.
10. The value of x is determined by counting the number of digits before the decimal point in the hole concentration.
11. In this case, the hole concentration is 1020, which has 4 digits before the decimal point.
12. Therefore, x = 4.
**Conclusion:**
The value of x is 4, representing the hole concentration in the steady state.
- Illumination generates 1020 electron-hole pairs per cm3 per second.
- Minority carrier lifetime in the sample is 1 s.
**Objective:**
To find the value of x, where x is an integer, representing the hole concentration in the steady state.
**Explanation:**
1. The steady state condition is achieved when the rate of generation of electron-hole pairs is equal to the rate of recombination of electron-hole pairs.
2. In the given problem, the rate of generation of electron-hole pairs is given as 1020 pairs/cm3/s.
3. Let's assume the hole concentration in the steady state is n.
4. The rate of recombination of electron-hole pairs is given by the equation: recombination rate = (number of electron-hole pairs) / (minority carrier lifetime).
5. The rate of recombination of holes is given by the equation: recombination rate = n / (minority carrier lifetime).
6. Equating the rate of generation and the rate of recombination, we have: 1020 pairs/cm3/s = n / 1s.
7. Solving the equation for n, we get: n = 1020 pairs/cm3/s.
8. Therefore, the hole concentration in the steady state is approximately 1020 cm-3.
9. We need to express the hole concentration in the form of 10x, where x is an integer.
10. The value of x is determined by counting the number of digits before the decimal point in the hole concentration.
11. In this case, the hole concentration is 1020, which has 4 digits before the decimal point.
12. Therefore, x = 4.
**Conclusion:**
The value of x is 4, representing the hole concentration in the steady state.
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An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how?
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An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how?.
An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how?.
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An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how?, a detailed solution for An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how? has been provided alongside types of An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is ? x is found to be 14. Can anyone explain me how? theory, EduRev gives you an
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