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ECE Mobility of semiconductor Video Lecture - GATE
FAQs on ECE Mobility of semiconductor Video Lecture - GATE
| 1. What is ECE mobility of semiconductor and why is it important in the field of electronics? |  |
Ans. ECE mobility of semiconductor refers to the ability of charge carriers (electrons or holes) to move through a semiconductor material in the presence of an electric field. It is an important parameter as it determines how quickly and efficiently the charge carriers can move, which directly affects the conductivity and performance of electronic devices.
| 2. How is ECE mobility of semiconductor measured and what are the units used? | |
Ans. ECE mobility of semiconductor is typically measured using the Hall effect. In this method, a magnetic field is applied perpendicular to the direction of current flow in the semiconductor, and the resulting voltage is measured. The mobility can be calculated using the formula: mobility = (Hall voltage)/(magnetic field × current density). The units of ECE mobility are usually expressed in square centimeters per volt-second (cm^2/Vs).
| 3. What factors affect the ECE mobility of semiconductor? | |
Ans. Several factors influence the ECE mobility of semiconductor, including temperature, impurity concentration, crystal structure, and electric field strength. Higher temperatures generally lead to increased scattering of charge carriers, reducing their mobility. Impurities can also disrupt the crystal lattice, reducing mobility. Crystal defects or imperfections can hinder carrier movement as well. Additionally, a stronger electric field can cause more scattering, decreasing the mobility.
| 4. How does ECE mobility impact the performance of semiconductor devices? | |
Ans. The ECE mobility of semiconductor directly affects the speed and efficiency of electronic devices. Higher mobility allows for faster charge carrier movement, resulting in faster switching speeds and improved device performance. Additionally, higher mobility leads to lower resistivity, reducing power losses and improving the overall efficiency of the device.
| 5. Can ECE mobility be improved in semiconductor materials? | |
Ans. Yes, ECE mobility can be enhanced in semiconductor materials through various techniques. One approach is to optimize the crystal structure and minimize crystal defects during the material fabrication process. Another method involves reducing impurity concentrations, which can improve carrier mobility. Additionally, engineering the electric field distribution within the device can help reduce scattering and enhance mobility. Overall, improving ECE mobility requires careful material design and optimization of device fabrication processes.
Text Transcript from Video
hello we are discussing about gate 1994
you see paper this is one more question
related to electronics
a small concentration of minority
carriers is injected into a homogeneous
semiconductor crystal at one point
an electric field of ten volt per
centimeter is applied across the crystal
and this moves the minority carriers a
distance of one centimeter in 20
microseconds the mobility in centimeter
square per volt second will be
we need to calculate mobility
now minority carriers when they are
moving one centimeter in 20 microseconds
and if the trick will apply this 10 volt
per centimeter
so the answer for this one is very very
simple mobility is indicated with mu and
electric field is electing Epsilon we
know the relation between
mobility and electric field with respect
to velocity drift velocity is nothing
but mu into electric field where mu is
nothing but mobility is nothing but
electric field we drift velocity
V is equal to drift velocity that you
can write it as meter per second that is
nothing but we can calculate in this way
distance by time so how much distance it
has mood is nothing but 1 centimeter
divided by 20 microseconds and electric
field is given
ten volt per centimeter
if you are going with mobility mobility
mu is equal to V divided by E which is
nothing but one centimetre divided by 20
microseconds divided by ten volt per
centimeter this volt per centimeter if
it is going without
in the numerator at that time mu can be
written as 1 by 20 in
one by ten which is nothing but 1 by you
can
and by 20 into 1 by 10
and units if you are writing at that
time it is centimeter square
by volt per microsecond if you are
taking that micro
towards seconds because the answer a
speeding centimeter square per volt
second so by that time one by 200
into 10 power minus 6 centimeter square
per volt second so that is equal to
5,000 centimeter square per volt second
the answer for the question is si
this is the right answer
thank you
you see paper this is one more question
related to electronics
a small concentration of minority
carriers is injected into a homogeneous
semiconductor crystal at one point
an electric field of ten volt per
centimeter is applied across the crystal
and this moves the minority carriers a
distance of one centimeter in 20
microseconds the mobility in centimeter
square per volt second will be
we need to calculate mobility
now minority carriers when they are
moving one centimeter in 20 microseconds
and if the trick will apply this 10 volt
per centimeter
so the answer for this one is very very
simple mobility is indicated with mu and
electric field is electing Epsilon we
know the relation between
mobility and electric field with respect
to velocity drift velocity is nothing
but mu into electric field where mu is
nothing but mobility is nothing but
electric field we drift velocity
V is equal to drift velocity that you
can write it as meter per second that is
nothing but we can calculate in this way
distance by time so how much distance it
has mood is nothing but 1 centimeter
divided by 20 microseconds and electric
field is given
ten volt per centimeter
if you are going with mobility mobility
mu is equal to V divided by E which is
nothing but one centimetre divided by 20
microseconds divided by ten volt per
centimeter this volt per centimeter if
it is going without
in the numerator at that time mu can be
written as 1 by 20 in
one by ten which is nothing but 1 by you
can
and by 20 into 1 by 10
and units if you are writing at that
time it is centimeter square
by volt per microsecond if you are
taking that micro
towards seconds because the answer a
speeding centimeter square per volt
second so by that time one by 200
into 10 power minus 6 centimeter square
per volt second so that is equal to
5,000 centimeter square per volt second
the answer for the question is si
this is the right answer
thank you
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Dec 18, 2024 Last updated |
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