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Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3?
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Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. ...
Solution:
Given:
Calculations:
Answer:
Given:
Hole density (n(h)) in pure Si = 1.5 x 10^16 m^-3
Doped Si hole density (n(h)) = 4.5 x 10^22 m^-3
Electron density (n(e)) in doped Si = ?
Calculations:
It is given that the Si is doped with impurity, which means that either p-type or n-type semiconductor is formed.
As the hole density (n(h)) is increased, it indicates that the impurity added is a p-type impurity.
The relation between electron density (n(e)) and hole density (n(h)) for a p-type semiconductor is given as:
n(e) * n(h) = ni^2
Where, ni is the intrinsic carrier concentration, which is equal to 1.5 x 10^10 m^-3 for Si at 300K.
Substituting the given values, we get:
n(e) = ni^2 / n(h) = (1.5 x 10^10 m^-3)^2 / (4.5 x 10^22 m^-3) = 5 x 10^9 m^-3
Answer:
Therefore, the electron density in the doped Si is 5 x 10^9 m^-3.
Community Answer
Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. ...
Ni^2= ne×nh ni= 1.5×10^16. as current flows due to holes and electrons densities. nh = 4.5×10^22. putting the values of ni & nh gives ne = 5×10^9.
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Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3?
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Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? for NEET 2024 is part of NEET preparation. The Question and answers have been prepared according to the NEET exam syllabus. Information about Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? covers all topics & solutions for NEET 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3?.
Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? for NEET 2024 is part of NEET preparation. The Question and answers have been prepared according to the NEET exam syllabus. Information about Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? covers all topics & solutions for NEET 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3?.
Solutions for Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? in English & in Hindi are available as part of our courses for NEET.
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Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3?, a detailed solution for Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? has been provided alongside types of Pure Si at 300K has hole and electron densities are 1.5 x 10^16 m^-3. Doping it by an impurity increases the hole density n(h) to 4.5 x 10^22 m^-3. Electron density in the doped silicon is? Answer is 5 x 10^9 m-3? theory, EduRev gives you an
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