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When the gate-to-source voltage VGS of a MOSFET with a threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400mV is
- a)0.5 mA
- b)2.0 mA
- c)3.5 mA
- d)4.0 mA
Correct answer is option 'D'. Can you explain this answer?
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When the gate-to-source voltageVGS of a MOSFET with a threshold voltag...
The MOSFET current is saturation is given by,
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Solution:
Given data:
Threshold voltage (VTH) = 400mV
Gate-to-source voltage (VGS) for saturation = 900mV
Drain current (ID) at VGS = 900mV and saturation = 1mA
To find:
The drain current (ID) for VGS = 1400mV
Explanation:
The MOSFET operates in saturation region when VGS > VTH and VDS > (VGS - VTH).
From the given data, VGS = 900mV is the gate-to-source voltage that puts the MOSFET into saturation region and the corresponding drain current is 1mA.
Now, we need to find the drain current when the gate-to-source voltage is increased to 1400mV.
As per the question, we can assume that the MOSFET operates in saturation region.
The drain current in saturation region is given by:
ID = (μnCox/2) * (W/L) * (VGS - VTH)^2
where, μn is the electron mobility, Cox is the oxide capacitance per unit area, W is the channel width, L is the channel length.
From the question, we can neglect the channel width modulation effect. Hence, the drain current equation reduces to:
ID = (μnCox/2) * (W/L) * (VGS - VTH)^2
Given, ID = 1mA, VGS = 900mV
Substituting the given values, we get:
1 mA = (μnCox/2) * (W/L) * (900 mV - 400 mV)^2
Solving for (W/L), we get:
(W/L) = 2 * ID / (μnCox * (VGS - VTH)^2)
Now, we can use this value of (W/L) to calculate the drain current for VGS = 1400mV.
Given, VGS = 1400mV
Substituting the given values, we get:
ID = (μnCox/2) * (W/L) * (VGS - VTH)^2
ID = (μnCox/2) * (2 * ID / (μnCox * (900 mV - 400 mV)^2)) * (1400 mV - 400 mV)^2
ID = 4 mA
Therefore, the drain current for VGS = 1400mV is 4mA.
Hence, the correct answer is option D.
Given data:
Threshold voltage (VTH) = 400mV
Gate-to-source voltage (VGS) for saturation = 900mV
Drain current (ID) at VGS = 900mV and saturation = 1mA
To find:
The drain current (ID) for VGS = 1400mV
Explanation:
The MOSFET operates in saturation region when VGS > VTH and VDS > (VGS - VTH).
From the given data, VGS = 900mV is the gate-to-source voltage that puts the MOSFET into saturation region and the corresponding drain current is 1mA.
Now, we need to find the drain current when the gate-to-source voltage is increased to 1400mV.
As per the question, we can assume that the MOSFET operates in saturation region.
The drain current in saturation region is given by:
ID = (μnCox/2) * (W/L) * (VGS - VTH)^2
where, μn is the electron mobility, Cox is the oxide capacitance per unit area, W is the channel width, L is the channel length.
From the question, we can neglect the channel width modulation effect. Hence, the drain current equation reduces to:
ID = (μnCox/2) * (W/L) * (VGS - VTH)^2
Given, ID = 1mA, VGS = 900mV
Substituting the given values, we get:
1 mA = (μnCox/2) * (W/L) * (900 mV - 400 mV)^2
Solving for (W/L), we get:
(W/L) = 2 * ID / (μnCox * (VGS - VTH)^2)
Now, we can use this value of (W/L) to calculate the drain current for VGS = 1400mV.
Given, VGS = 1400mV
Substituting the given values, we get:
ID = (μnCox/2) * (W/L) * (VGS - VTH)^2
ID = (μnCox/2) * (2 * ID / (μnCox * (900 mV - 400 mV)^2)) * (1400 mV - 400 mV)^2
ID = 4 mA
Therefore, the drain current for VGS = 1400mV is 4mA.
Hence, the correct answer is option D.
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When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer?
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When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer?.
When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for When the gate-to-source voltageVGS of a MOSFET with a threshold voltage of400mV, working in saturation is900mV, the drain current is observed to be1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an appliedVGS of1400mV isa)0.5 mAb)2.0 mAc)3.5 mAd)4.0 mACorrect answer is option 'D'. Can you explain this answer?.
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