Consider a long-channel MOSFET with a channel length 1 andmu;m and width 10 andmu;m. The device parameters are acceptor concentration NA = 5 andtimes; 1016 cm-3, electron mobility andmu;n = 800 cm2/V-s, oxide capacitance/area Cox = 3.45 andtimes; 10-7 F/cm2, threshold voltage VT = 0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).Correct answer is '25.5'. Can you explain this answer? - EduRev Electronics and Communication Engineering (ECE) Question

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Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA = 5 × 10¹⁶ cm^-3, electron mobility μ_n = 800 cm²/V-s, oxide capacitance/area C_ox = 3.45 × 10^-7 F/cm2, threshold voltage V_T = 0.7 V. The drain saturation current (I_Dsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).

Correct answer is '25.5'. Can you explain this answer?

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Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA = 5 × 1016 cm-3, electron mobility μn = 800 cm2/V-s, oxide capacitance/area Cox = 3.45 × 10-7 F/cm2, threshold voltage VT = 0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).Correct answer is '25.5'. Can you explain this answer?

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Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA = 5 × 1016 cm-3, electron mobility μn = 800 cm2/V-s, oxide capacitance/area Cox = 3.45 × 10-7 F/cm2, threshold voltage VT = 0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).Correct answer is '25.5'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA = 5 × 1016 cm-3, electron mobility μn = 800 cm2/V-s, oxide capacitance/area Cox = 3.45 × 10-7 F/cm2, threshold voltage VT = 0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).Correct answer is '25.5'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA = 5 × 1016 cm-3, electron mobility μn = 800 cm2/V-s, oxide capacitance/area Cox = 3.45 × 10-7 F/cm2, threshold voltage VT = 0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).Correct answer is '25.5'. Can you explain this answer?.

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