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In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?
- a)Drain current decrease
- b)Drain current increase
- c)Drain current constant
- d)None of these
Correct answer is option 'A'. Can you explain this answer?
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Verified Answer
In n-channel depletion type MOSFET when drain terminal is positive bia...
When VGS is applied gate is given with negative voltage and therefore positive charges are created in the semi-conductor channel and due to the recombination less no of negative charges or electrons will reaching the drain. Therefore, drain current (ld) decreases.
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In n-channel depletion type MOSFET when drain terminal is positive bia...
Answer:
In an n-channel depletion type MOSFET, the drain terminal is positive biased with respect to the source. When a negative voltage is applied to the gate terminal, the following changes occur:
1. Depletion Region:
- When a negative voltage is applied to the gate terminal, the p-type substrate under the gate region becomes more conductive.
- This increases the width of the depletion region, which extends from the source to the drain.
- The increase in the depletion region reduces the effective channel length and width, decreasing the channel conductivity.
2. Channel Conductivity:
- The decrease in channel conductivity reduces the drain current.
- This is because the drain current is directly proportional to the channel conductivity.
- Therefore, when a negative voltage is applied to the gate terminal, the drain current decreases.
3. Threshold Voltage:
- The threshold voltage is the minimum voltage required to create an inversion layer in the channel and allow current flow.
- When a negative voltage is applied to the gate terminal, the threshold voltage increases.
- The increase in the threshold voltage further reduces the channel conductivity and decreases the drain current.
Therefore, in an n-channel depletion type MOSFET, when the drain terminal is positive biased with respect to the source and a negative voltage is applied to the gate terminal, the drain current decreases.
In an n-channel depletion type MOSFET, the drain terminal is positive biased with respect to the source. When a negative voltage is applied to the gate terminal, the following changes occur:
1. Depletion Region:
- When a negative voltage is applied to the gate terminal, the p-type substrate under the gate region becomes more conductive.
- This increases the width of the depletion region, which extends from the source to the drain.
- The increase in the depletion region reduces the effective channel length and width, decreasing the channel conductivity.
2. Channel Conductivity:
- The decrease in channel conductivity reduces the drain current.
- This is because the drain current is directly proportional to the channel conductivity.
- Therefore, when a negative voltage is applied to the gate terminal, the drain current decreases.
3. Threshold Voltage:
- The threshold voltage is the minimum voltage required to create an inversion layer in the channel and allow current flow.
- When a negative voltage is applied to the gate terminal, the threshold voltage increases.
- The increase in the threshold voltage further reduces the channel conductivity and decreases the drain current.
Therefore, in an n-channel depletion type MOSFET, when the drain terminal is positive biased with respect to the source and a negative voltage is applied to the gate terminal, the drain current decreases.
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In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer?
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In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer?.
In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer?.
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In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of In n-channel depletion type MOSFET when drain terminal is positive biased w.r.t. source and if VGS is applied with negative voltage on the gate terminal, then what will be done ?a)Drain current decreaseb)Drain current increasec)Drain current constantd)None of theseCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an
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