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The small-signal resistance ( i.e dVB/dID)in k? offered by the n-channelMOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device Transconductance parameter kN = μ Cox(W / L0 = 40μA / V2threshold voltage VTN = 1V, and neglect body effect and channel lengthmodulation effects)a)12.5b)25c)50d)100Correct answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about The small-signal resistance ( i.e dVB/dID)in k? offered by the n-channelMOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device Transconductance parameter kN = μ Cox(W / L0 = 40μA / V2threshold voltage VTN = 1V, and neglect body effect and channel lengthmodulation effects)a)12.5b)25c)50d)100Correct answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The small-signal resistance ( i.e dVB/dID)in k? offered by the n-channelMOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device Transconductance parameter kN = μ Cox(W / L0 = 40μA / V2threshold voltage VTN = 1V, and neglect body effect and channel lengthmodulation effects)a)12.5b)25c)50d)100Correct answer is option 'B'. Can you explain this answer?.

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