The small-signal resistance ( i.e dVB/dID)in k? offered by the n-channelMOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device Transconductance parameter kN = andmu; Cox(W / L0 = 40andmu;A / V2threshold voltage VTN = 1V, and neglect body effect and channel lengthmodulation effects)a)12.5b)25c)50d)100Correct answer is option 'B'. Can you explain this answer?

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The small-signal resistance ( i.e dV_B/dI_D) in k? offered by the n-channel MOSFET M shown in the figure below, at a bias point of V_B = 2 V is (device data for M: device Transconductance parameter k_N = μ C_ox (W / L0 = 40μA / V²threshold voltage V_TN = 1V, and neglect body effect and channel length
modulation effects)

a)
12.5
b)
25
c)
50
d)
100

Correct answer is option 'B'. Can you explain this answer?

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The small-signal resistance ( i.e dVB/dID)in k? offered by the n-channelMOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device Transconductance parameter kN = μ Cox(W / L0 = 40μA / V2threshold voltage VTN = 1V, and neglect body effect and channel lengthmodulation effects)a)12.5b)25c)50d)100Correct answer is option 'B'. Can you explain this answer?

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