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Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosource
voltage of 1.8V. Assume that W /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,
and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain
conductance (in micro siemens)is –––––.
voltage of 1.8V. Assume that W /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,
and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain
conductance (in micro siemens)is –––––.
Correct answer is '28.35'. Can you explain this answer?
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Consider an n-channel metal oxide semiconductor field effect transisto...
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Where W is the width of the transistor and L is the length of the transistor. The threshold voltage of the MOSFET is 0.7V.
To determine the drain current of the MOSFET, we can use the equation:
Id = 0.5 * μ * Cox * (W / L) * (Vgs - Vth)^2
Where Id is the drain current, μ is the mobility of the carrier (electron), Cox is the oxide capacitance per unit area, Vgs is the gate-to-source voltage, and Vth is the threshold voltage.
Assuming a typical value of μ = 200 cm^2/Vs and Cox = 0.5 μF/cm^2, we can substitute the given values into the equation:
Id = 0.5 * 200 cm^2/Vs * 0.5 μF/cm^2 * (4) * (1.8V - 0.7V)^2
= 0.5 * 200 * 0.5 * 4 * (1.8 - 0.7)^2
= 0.5 * 200 * 0.5 * 4 * 1.1^2
= 0.5 * 200 * 0.5 * 4 * 1.21
= 0.605 A
Therefore, the drain current of the MOSFET is approximately 0.605 Amps.
To determine the drain current of the MOSFET, we can use the equation:
Id = 0.5 * μ * Cox * (W / L) * (Vgs - Vth)^2
Where Id is the drain current, μ is the mobility of the carrier (electron), Cox is the oxide capacitance per unit area, Vgs is the gate-to-source voltage, and Vth is the threshold voltage.
Assuming a typical value of μ = 200 cm^2/Vs and Cox = 0.5 μF/cm^2, we can substitute the given values into the equation:
Id = 0.5 * 200 cm^2/Vs * 0.5 μF/cm^2 * (4) * (1.8V - 0.7V)^2
= 0.5 * 200 * 0.5 * 4 * (1.8 - 0.7)^2
= 0.5 * 200 * 0.5 * 4 * 1.1^2
= 0.5 * 200 * 0.5 * 4 * 1.21
= 0.605 A
Therefore, the drain current of the MOSFET is approximately 0.605 Amps.
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Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer?
Question Description
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer?.
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer?.
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Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer?, a detailed solution for Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? has been provided alongside types of Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-tosourcevoltage of 1.8V. Assume thatW /L =4, μNCox = 70 X10-6AV-2, the threshold voltage is 0.3V,and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drainconductance (in micro siemens)is –––––.Correct answer is '28.35'. Can you explain this answer? tests, examples and also practice GATE tests.
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