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The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer?.

Solutions for The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer?, a detailed solution for The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? has been provided alongside types of The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C0x of 100 nF/crm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is 1/Th. the magnitude of depletion charge per unit area (in C/cm2) isa)0.52 x 10-8b)0.93 x 10-8c)1.41 x 10-8d)1.70 x 10-8Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice GATE tests.