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The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer?.

Solutions for The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer?, a detailed solution for The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? has been provided alongside types of The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 1017 cm-3. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 isa)approximately 0.3 times that of T1b)approximately 0.7 times that of T1c)approximately 2.5 times that of T1d)None of theseCorrect answer is option 'D'. Can you explain this answer? tests, examples and also practice GATE tests.