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An N-type semiconductor strain gauge has a nominal resistance of 1000Ω and a gauge factor of -100. The resistance of the gage, when a compressive strain of 100 m/m is applied, is (2003)
  • a)
    900 Ω
  • b)
    990 Ω
  • c)
    1010 Ω
  • d)
    1100 Ω
Correct answer is option 'B'. Can you explain this answer?
Verified Answer
An N-type semiconductor strain gauge has a nominal resistance of 1000...
Gauge factor,
or ΔR / R = -100 x 100 x 10-6 = -10-2 R
or ΔR = -10Ω
then, resistance of the gauge = 1000 - 10
= 990Ω.
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Most Upvoted Answer
An N-type semiconductor strain gauge has a nominal resistance of 1000...
Calculation of the resistance of the strain gauge:
To calculate the new resistance of the strain gauge when a compressive strain of 100 m/m is applied, we can use the formula:
R_new = R_nominal + GF * Strain * R_nominal
Where:
R_new = new resistance of the strain gauge
R_nominal = nominal resistance of the strain gauge (1000Ω)
GF = gauge factor of the strain gauge (-100)
Strain = applied strain (100 m/m)

Substitute the values into the formula:
R_new = 1000 + (-100) * 100 * 1000
R_new = 1000 - 1000000
R_new = 1000 - 1000
R_new = 990Ω
Therefore, the resistance of the strain gauge, when a compressive strain of 100 m/m is applied, is 990Ω (option B).
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Community Answer
An N-type semiconductor strain gauge has a nominal resistance of 1000...
Gauge factor,
or ΔR / R = -100 x 100 x 10-6 = -10-2 R
or ΔR = -10Ω
then, resistance of the gauge = 1000 - 10
= 990Ω.
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An N-type semiconductor strain gauge has a nominal resistance of 1000Ω and a gauge factor of -100. The resistance of the gage, when a compressive strain of 100 m/m is applied, is (2003)a)900 Ωb)990 Ωc)1010 Ωd)1100 ΩCorrect answer is option 'B'. Can you explain this answer? for GATE 2025 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about An N-type semiconductor strain gauge has a nominal resistance of 1000Ω and a gauge factor of -100. The resistance of the gage, when a compressive strain of 100 m/m is applied, is (2003)a)900 Ωb)990 Ωc)1010 Ωd)1100 ΩCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An N-type semiconductor strain gauge has a nominal resistance of 1000Ω and a gauge factor of -100. The resistance of the gage, when a compressive strain of 100 m/m is applied, is (2003)a)900 Ωb)990 Ωc)1010 Ωd)1100 ΩCorrect answer is option 'B'. Can you explain this answer?.
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