Which of the following is true with respect to Schottky diode?a)It has...
The Schottky also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. A silicon diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
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Which of the following is true with respect to Schottky diode?a)It has...
Schottky diode has a low forward voltage drop
Schottky diode is a type of diode that is made up of a metal-semiconductor junction. It is also known as a hot-carrier diode or a surface-barrier diode. Here are the reasons why Schottky diode has a low forward voltage drop:
Metal-semiconductor junction
The junction in Schottky diode is made up of a metal and a semiconductor material. The metal part of the junction is responsible for the low forward voltage drop. When a voltage is applied across the diode, the metal part of the junction injects electrons into the semiconductor material, which reduces the effective barrier height. This results in a lower forward voltage drop compared to a conventional p-n junction diode.
Fast switching action
Schottky diode has a fast switching action due to its low forward voltage drop. This means that it can turn on and off very quickly, which makes it suitable for high-frequency applications.
Low reverse recovery time
Schottky diode has a low reverse recovery time compared to a conventional p-n junction diode. This is because there is no depletion region in the metal-semiconductor junction, which means that there is no charge storage effect. As a result, the Schottky diode can switch from the forward to the reverse bias condition very quickly.
Conclusion
In summary, Schottky diode has a low forward voltage drop due to its metal-semiconductor junction. It also has a fast switching action and a low reverse recovery time, which makes it suitable for high-frequency applications.