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Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?
- a)0.88 Ω-cm
- b)1.28 Ω-cm
- c)2.18 Ω-cm
- d)3 Ω-cm
Correct answer is option 'A'. Can you explain this answer?
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Verified Answer
Consider a GaAs sample at T = 300 K. Let the Hall effect device is fab...
Majority carrier concentration, n is given by
In Hall Effect, mobility μn is given by
= 8182cm2/V−sec
Hence, we obtain the conductance as
σ = eμnn
= 1.6×10−19× 8.68 × 1014 × 8182
= 0.88Ω - cm
Most Upvoted Answer
Consider a GaAs sample at T = 300 K. Let the Hall effect device is fab...
We can use the Hall coefficient equation to calculate the carrier concentration:
R_H = 1/ne
where R_H is the Hall coefficient, n is the carrier concentration, and e is the electron charge. We can rearrange this equation to solve for n:
n = 1/(R_H * e)
First, we need to calculate the Hall coefficient:
R_H = V_H / (I_x * B_z)
where V_H is the Hall voltage. We can rearrange this equation to solve for V_H:
V_H = R_H * I_x * B_z
Plugging in the given values, we get:
V_H = (2.2 mV)/(2.5 mA * 2.5 T) = 0.0352 cm^3/C
Now we can calculate the carrier concentration:
n = 1/(0.0352 cm^3/C * 1.6 x 10^-19 C) = 1.78 x 10^17 cm^-3
Next, we can use the formula for the electrical conductivity to calculate the mobility:
σ = neμ
where σ is the electrical conductivity and μ is the mobility. Rearranging this equation, we get:
μ = σ/ne
We can calculate the electrical conductivity using Ohm's law:
σ = I_x / (W * L * V_x)
Plugging in the given values, we get:
σ = (2.5 mA)/(0.05 cm * 0.5 cm * 2.2 V) = 2.27 x 10^3 (Ω cm)^-1
Finally, we can calculate the mobility:
μ = 2.27 x 10^3 (Ω cm)^-1 / (1.78 x 10^17 cm^-3 * 1.6 x 10^-19 C) = 8.02 x 10^3 cm^2/Vs
Therefore, the carrier concentration in the GaAs sample is 1.78 x 10^17 cm^-3 and the mobility is 8.02 x 10^3 cm^2/Vs.
R_H = 1/ne
where R_H is the Hall coefficient, n is the carrier concentration, and e is the electron charge. We can rearrange this equation to solve for n:
n = 1/(R_H * e)
First, we need to calculate the Hall coefficient:
R_H = V_H / (I_x * B_z)
where V_H is the Hall voltage. We can rearrange this equation to solve for V_H:
V_H = R_H * I_x * B_z
Plugging in the given values, we get:
V_H = (2.2 mV)/(2.5 mA * 2.5 T) = 0.0352 cm^3/C
Now we can calculate the carrier concentration:
n = 1/(0.0352 cm^3/C * 1.6 x 10^-19 C) = 1.78 x 10^17 cm^-3
Next, we can use the formula for the electrical conductivity to calculate the mobility:
σ = neμ
where σ is the electrical conductivity and μ is the mobility. Rearranging this equation, we get:
μ = σ/ne
We can calculate the electrical conductivity using Ohm's law:
σ = I_x / (W * L * V_x)
Plugging in the given values, we get:
σ = (2.5 mA)/(0.05 cm * 0.5 cm * 2.2 V) = 2.27 x 10^3 (Ω cm)^-1
Finally, we can calculate the mobility:
μ = 2.27 x 10^3 (Ω cm)^-1 / (1.78 x 10^17 cm^-3 * 1.6 x 10^-19 C) = 8.02 x 10^3 cm^2/Vs
Therefore, the carrier concentration in the GaAs sample is 1.78 x 10^17 cm^-3 and the mobility is 8.02 x 10^3 cm^2/Vs.
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Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer?
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Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer?.
Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer?.
Solutions for Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE.
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Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider a GaAs sample at T = 300 K. Let the Hall effect device is fabricated with the following geometry: d = 0.01cm, W = 0.05 cm and L = 0.5 cm. The electrical parameters are : Ix = 2.5 mA, Vx = 2.2 V and Bz = 2.5 × 10-2 tesla. The hall voltage is VH = -4.5 mV. What will be the resistivity of the sample?a)0.88 -cmb)1.28 -cmc)2.18 -cmd)3 -cmCorrect answer is option 'A'. Can you explain this answer? tests, examples and also practice GATE tests.
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