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For an abrupt p-n junction diode, the doping concentrations on p-side is 9 × 1016 cm3 and an n-side is 5 × 1016/cm3. The diode is in reverse bias operating mode with total depletion width of 4 μm. Then the depletion width on n-side is __________ μm.a)2b)3Correct answer is between '2,3'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about For an abrupt p-n junction diode, the doping concentrations on p-side is 9 × 1016 cm3 and an n-side is 5 × 1016/cm3. The diode is in reverse bias operating mode with total depletion width of 4 μm. Then the depletion width on n-side is __________ μm.a)2b)3Correct answer is between '2,3'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For an abrupt p-n junction diode, the doping concentrations on p-side is 9 × 1016 cm3 and an n-side is 5 × 1016/cm3. The diode is in reverse bias operating mode with total depletion width of 4 μm. Then the depletion width on n-side is __________ μm.a)2b)3Correct answer is between '2,3'. Can you explain this answer?.

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