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When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer?.

Solutions for When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer?, a detailed solution for When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? has been provided alongside types of When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, area)2.7μm and 2.3 × 105 V/cmb)0.3 μm and 4.15× 105 V/cmc)0.3 μm and 0.42 × 105 V/cmd)2.1μm and 0.42 × 105 V/cmCorrect answer is option 'B'. Can you explain this answer? tests, examples and also practice GATE tests.