Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 andmu;m and the permittivity of silicon ( andepsilon;si ) is1.044andtimes;10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer?

Explore Courses UPSC Exam UPSC Test Series Free Notes EduRev Infinity

Open App

GATE Exam > GATE Questions > Consider an abrupt PN junction (at T = 300 K)...

Join the Discussion on the App

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region
width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( ε_si ) is
1.044×10^-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)
is _________.

Imp : you should answer only the numneric value

Correct answer is '30.66'. Can you explain this answer?

FREE This question is part of

Electronics And Communication - ECE 2014 GATE Paper (Practice Test)

Attempt Test

Attempt this Test

Verified Answer

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The...

View all questions of this test

View all answers Start learning for free

< Previous Question Next Question >

Explore Courses for GATE exam

Similar GATE Doubts

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044 x 10-12 F/cm At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

View answer

In the three dimensional view of a silicon n-channel MOS transistor shown below, δ = 20 nm. The transistor is of width 1 μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and ε0 =8.9 x 10-12F/mQ.The gate source overlap capacitance is approximately

View answer

When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm . Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and themaximum electric field in the depletion region, respectively, are

View answer

In the three dimensional view of a silicon n-channel MOS transistor shown below, δ = 20 nm. The transistor is of width 1 μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and ε0 =8.9 x 10-12F/mQ.The source-body junction capacitance is approximately

View answer

A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter is

View answer

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer?

Share with a Friend

Answer this doubt

Question Description
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer?.

Solutions for Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer?, a detailed solution for Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? has been provided alongside types of Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion regionwidth Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon ( εsi ) is1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm)is _________.Imp : you should answer only the numneric valueCorrect answer is '30.66'. Can you explain this answer? tests, examples and also practice GATE tests.

Explore Courses for GATE exam