GATE Exam  >  GATE Questions  >  A Silicon PN junction diode under reverse bia... Start Learning for Free
A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m . The depletion capacitance of the diode per square meter is
  • a)
    100 μF
  • b)
    10 μF
  • c)
    1 μF
  • d)
    20 μF
Correct answer is option 'B'. Can you explain this answer?
Verified Answer
A Silicon PN junction diode under reverse bias lias depletion region o...
C= depletion capacitance ; 
Depletion capacitance/ m2

View all questions of this test
Most Upvoted Answer
A Silicon PN junction diode under reverse bias lias depletion region o...
The depletion region is the region in a PN junction diode where there are no free charge carriers due to the diffusion of majority carriers. Under reverse bias, the negative terminal of the power supply is connected to the P-type region of the diode, and the positive terminal is connected to the N-type region. This causes the depletion region to widen.

The width of the depletion region under reverse bias depends on the magnitude of the reverse bias voltage. The higher the reverse bias voltage, the wider the depletion region becomes. However, the exact relationship between the reverse bias voltage and the depletion region width is dependent on the specific characteristics of the diode, such as its doping concentrations and the built-in potential.

Typically, the width of the depletion region in a silicon PN junction diode under reverse bias is on the order of a few micrometers to a few tens of micrometers. The exact width can vary depending on the specific diode design and fabrication process.
Explore Courses for GATE exam
A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer?
Question Description
A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer?.
Solutions for A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.
Here you can find the meaning of A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer?, a detailed solution for A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? has been provided alongside types of A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? tests, examples and also practice GATE tests.
Explore Courses for GATE exam
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
10M+ students study on EduRev