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A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m . The depletion capacitance of the diode per square meter is
- a)100 μF
- b)10 μF
- c)1 μF
- d)20 μF
Correct answer is option 'B'. Can you explain this answer?
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A Silicon PN junction diode under reverse bias lias depletion region o...
CD = depletion capacitance ; 
Depletion capacitance/ m2
Depletion capacitance/ m2
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A Silicon PN junction diode under reverse bias lias depletion region o...
The depletion region is the region in a PN junction diode where there are no free charge carriers due to the diffusion of majority carriers. Under reverse bias, the negative terminal of the power supply is connected to the P-type region of the diode, and the positive terminal is connected to the N-type region. This causes the depletion region to widen.
The width of the depletion region under reverse bias depends on the magnitude of the reverse bias voltage. The higher the reverse bias voltage, the wider the depletion region becomes. However, the exact relationship between the reverse bias voltage and the depletion region width is dependent on the specific characteristics of the diode, such as its doping concentrations and the built-in potential.
Typically, the width of the depletion region in a silicon PN junction diode under reverse bias is on the order of a few micrometers to a few tens of micrometers. The exact width can vary depending on the specific diode design and fabrication process.
The width of the depletion region under reverse bias depends on the magnitude of the reverse bias voltage. The higher the reverse bias voltage, the wider the depletion region becomes. However, the exact relationship between the reverse bias voltage and the depletion region width is dependent on the specific characteristics of the diode, such as its doping concentrations and the built-in potential.
Typically, the width of the depletion region in a silicon PN junction diode under reverse bias is on the order of a few micrometers to a few tens of micrometers. The exact width can vary depending on the specific diode design and fabrication process.
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A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer?
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A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer?.
A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A Silicon PN junction diode under reverse bias lias depletion region of widlit 10 μm. The relative peunittivity of Silicon. εr =11.7 and the permittivity of free space ε0 = 8.85 x 10-12F/m . The depletion capacitance of the diode per square meter isa)100μFb)10μFc)1μFd)20μFCorrect answer is option 'B'. Can you explain this answer?.
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