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At T = 300 K, the hole mobility of a semiconductor μp = 500 cm2/V-s and kT/q = 26mV. The hole diffusion constant Dp in cm2/s is _______
Correct answer is '13'. Can you explain this answer?
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At T = 300 K, the hole mobility of a semiconductor μp= 500 cm2/V-s ...
At T = 300 K, the hole mobility of a semiconductor depends on several factors including the material properties and the doping concentration.
In general, the hole mobility increases with increasing temperature. This is because at higher temperatures, the lattice vibrations increase, reducing the scattering of charge carriers and allowing them to move more freely.
The hole mobility also depends on the doping concentration of the semiconductor. Doping refers to the intentional introduction of impurities into the crystal structure of the semiconductor to alter its electrical properties. Doping with acceptor impurities creates holes in the semiconductor, which can enhance the hole mobility.
The specific value of the hole mobility at T = 300 K will depend on the specific semiconductor material and its doping concentration. Different semiconductors have different intrinsic mobilities, which can range from a few to several hundred cm^2/Vs.
It's important to note that the hole mobility is just one factor that determines the overall conductivity of a semiconductor. The carrier concentration, which is influenced by the doping concentration, also plays a significant role in determining the conductivity.
In general, the hole mobility increases with increasing temperature. This is because at higher temperatures, the lattice vibrations increase, reducing the scattering of charge carriers and allowing them to move more freely.
The hole mobility also depends on the doping concentration of the semiconductor. Doping refers to the intentional introduction of impurities into the crystal structure of the semiconductor to alter its electrical properties. Doping with acceptor impurities creates holes in the semiconductor, which can enhance the hole mobility.
The specific value of the hole mobility at T = 300 K will depend on the specific semiconductor material and its doping concentration. Different semiconductors have different intrinsic mobilities, which can range from a few to several hundred cm^2/Vs.
It's important to note that the hole mobility is just one factor that determines the overall conductivity of a semiconductor. The carrier concentration, which is influenced by the doping concentration, also plays a significant role in determining the conductivity.
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Community Answer
At T = 300 K, the hole mobility of a semiconductor μp= 500 cm2/V-s ...
Concept:
The mobility of a carrier is related to the diffusion coefficient through Einstein’s relation as:
Dp = Hole diffusion density
μp = Mobility of holes
Calculation:
With μp = 500 cm2 / V-S and KT/q = 26mV, we can write:
Dp/500 = 26m
Dp = 500 × 26 m
Dp = 13000 m cm2 / s
Dp = 13 cm2 / s
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At T = 300 K, the hole mobility of a semiconductor μp= 500 cm2/V-s andkT/q = 26mV. The hole diffusion constant Dpin cm2/s is _______Correct answer is '13'. Can you explain this answer?
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