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Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer?.

Solutions for Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer?, a detailed solution for Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Consider an ideal long channel n MOSFET (enhancement mode) with gate length 10μm and width 100μm. The product of electron mobility (μn) and oxide capacitance per unit area (COX) is μnCOX = 1mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS [2 - sin(2t)]V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current isa)15 mAb)20 mAc)5 mAd)40 mACorrect answer is option 'A'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.