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To get n-type doped semiconductor, impurity to be added to silicon should have the following number of valence electrons
- a)1
- b)2
- c)3
- d)5
Correct answer is option 'D'. Can you explain this answer?
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To get n-type doped semiconductor, impurity to be added to silicon sho...
N-type doped semiconductor
N-type doped semiconductors are formed by adding impurities to the semiconductor material. The impurities used for this purpose are called donor impurities. These impurities have one extra valence electron than the semiconductor material.
Impurity with 5 valence electrons
The impurity to be added to silicon for getting an n-type doped semiconductor should have 5 valence electrons. This is because of the following reasons:
- Silicon, which is a group 4 element, has 4 valence electrons.
- When an impurity with 5 valence electrons, such as phosphorus or arsenic, is added to silicon, it forms an extra electron in the crystal structure of the semiconductor material.
- This extra electron is loosely bound to the impurity atom and can easily move through the crystal lattice of the semiconductor material.
- This extra electron increases the conductivity of the semiconductor material and makes it an n-type doped semiconductor.
Conclusion
Therefore, to get an n-type doped semiconductor, it is necessary to add an impurity with 5 valence electrons to the semiconductor material. The commonly used donor impurities for this purpose are phosphorus and arsenic.
N-type doped semiconductors are formed by adding impurities to the semiconductor material. The impurities used for this purpose are called donor impurities. These impurities have one extra valence electron than the semiconductor material.
Impurity with 5 valence electrons
The impurity to be added to silicon for getting an n-type doped semiconductor should have 5 valence electrons. This is because of the following reasons:
- Silicon, which is a group 4 element, has 4 valence electrons.
- When an impurity with 5 valence electrons, such as phosphorus or arsenic, is added to silicon, it forms an extra electron in the crystal structure of the semiconductor material.
- This extra electron is loosely bound to the impurity atom and can easily move through the crystal lattice of the semiconductor material.
- This extra electron increases the conductivity of the semiconductor material and makes it an n-type doped semiconductor.
Conclusion
Therefore, to get an n-type doped semiconductor, it is necessary to add an impurity with 5 valence electrons to the semiconductor material. The commonly used donor impurities for this purpose are phosphorus and arsenic.
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To get n-type doped semiconductor, impurity to be added to silicon should have the following number of valence electronsa)1b)2c)3d)5Correct answer is option 'D'. Can you explain this answer?
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