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A silicon sample is uniformly doped with donor type impurities with a concentration of
1016 / cm3 . The electron and hole mobilities in the sample are
1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.
The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm) is _____________.
1016 / cm3 . The electron and hole mobilities in the sample are
1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.
The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm) is _____________.
Correct answer is '0.52'. Can you explain this answer?
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Given data:
- Donor impurity concentration: 1016/cm3
- Electron mobility: 1200 cm3/V-s
- Hole mobility: 400 cm2/V-s
- Charge of an electron: 1.6 x 10-19 C
The resistivity of a material is given by the formula ρ = 1/(q * n * μ), where ρ is the resistivity, q is the charge of an electron, n is the donor impurity concentration, and μ is the mobility.
Calculating the resistivity:
1. Calculate the effective concentration of charge carriers (electrons) using the donor impurity concentration:
- Since the impurities are completely ionized, the concentration of charge carriers (electrons) will be equal to the donor impurity concentration: n = 1016/cm3.
2. Calculate the resistivity:
- Plug the values into the formula: ρ = 1/(q * n * μ)
- q = 1.6 x 10-19 C
- n = 1016/cm3
- μ = 1200 cm3/V-s (electron mobility)
- Convert cm3/V-s to cm2/V-s: 1 cm3/V-s = 10-6 cm2/V-s
- Plug the values into the formula: ρ = 1/(1.6 x 10-19 C * 1016/cm3 * 1200 cm2/V-s * 10-6 cm3/V-s)
- Simplify the expression: ρ = 1/(1.6 x 10-19 C * 1016/cm3 * 1200 cm2/V-s * 10-6 cm3/V-s)
- ρ = 1.302083 x 10-5 Ω-cm
Therefore, the resistivity of the silicon sample is approximately 0.52 Ω-cm.
Given data:
- Donor impurity concentration: 1016/cm3
- Electron mobility: 1200 cm3/V-s
- Hole mobility: 400 cm2/V-s
- Charge of an electron: 1.6 x 10-19 C
The resistivity of a material is given by the formula ρ = 1/(q * n * μ), where ρ is the resistivity, q is the charge of an electron, n is the donor impurity concentration, and μ is the mobility.
Calculating the resistivity:
1. Calculate the effective concentration of charge carriers (electrons) using the donor impurity concentration:
- Since the impurities are completely ionized, the concentration of charge carriers (electrons) will be equal to the donor impurity concentration: n = 1016/cm3.
2. Calculate the resistivity:
- Plug the values into the formula: ρ = 1/(q * n * μ)
- q = 1.6 x 10-19 C
- n = 1016/cm3
- μ = 1200 cm3/V-s (electron mobility)
- Convert cm3/V-s to cm2/V-s: 1 cm3/V-s = 10-6 cm2/V-s
- Plug the values into the formula: ρ = 1/(1.6 x 10-19 C * 1016/cm3 * 1200 cm2/V-s * 10-6 cm3/V-s)
- Simplify the expression: ρ = 1/(1.6 x 10-19 C * 1016/cm3 * 1200 cm2/V-s * 10-6 cm3/V-s)
- ρ = 1.302083 x 10-5 Ω-cm
Therefore, the resistivity of the silicon sample is approximately 0.52 Ω-cm.
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A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer?
Question Description
A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer?.
A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer?.
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A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer?, a detailed solution for A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer? has been provided alongside types of A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________.Correct answer is '0.52'. Can you explain this answer? theory, EduRev gives you an
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