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An n+- n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the n+ and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be What is themagnitude of the built-in potential of this device?a)0.748Vb)0.460Vc)0.288Vd)0.173VCorrect answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared
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An n+- n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the n+ and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be What is themagnitude of the built-in potential of this device?a)0.748Vb)0.460Vc)0.288Vd)0.173VCorrect answer is option 'D'. Can you explain this answer?, a detailed solution for An n+- n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the n+ and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be What is themagnitude of the built-in potential of this device?a)0.748Vb)0.460Vc)0.288Vd)0.173VCorrect answer is option 'D'. Can you explain this answer? has been provided alongside types of An n+- n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the n+ and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be What is themagnitude of the built-in potential of this device?a)0.748Vb)0.460Vc)0.288Vd)0.173VCorrect answer is option 'D'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice An n+- n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the n+ and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be What is themagnitude of the built-in potential of this device?a)0.748Vb)0.460Vc)0.288Vd)0.173VCorrect answer is option 'D'. Can you explain this answer? tests, examples and also practice GATE tests.