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As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer?.

Solutions for As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer?, a detailed solution for As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? has been provided alongside types of As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of ND1= 1014cm-3andND2= 1016cm-3in the n-regions of the diodes, and uniform acceptor doping concentration ofNA1= 1014cm-3andNA2= 1016cm-3in the pregions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C2/C1 of their reverse bias capacitances for the same applied reverse bias, is __________.Correct answer is between '10.0,10.0'. Can you explain this answer? tests, examples and also practice GATE tests.