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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?
- a)All of the four are majority carrier devices.
- b)All the four are minority carrier devices
- c)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.
- d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.
Correct answer is option 'D'. Can you explain this answer?
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Verified Answer
For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor,...
MOSFET → Majority carrier device (NMOS, PMOS)
Diode → both majority & minority carrier device
Transister → Npn, pnp
IGBT → input is MOSFET, Output is BJT
Diode → both majority & minority carrier device
Transister → Npn, pnp
IGBT → input is MOSFET, Output is BJT
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor,...
Power Semiconductor Devices: IGBT, MOSFET, Diode and Thyristor
Majority and Minority Carrier Devices:
- Majority carrier devices: Conduct electricity mainly by the flow of majority carriers (electrons in N-type and holes in P-type).
- Minority carrier devices: Conduct electricity mainly by the flow of minority carriers (holes in N-type and electrons in P-type).
Statement:
D) MOSFET is a majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.
Explanation:
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a majority carrier device as it operates mainly on the principle of controlling the flow of majority carriers (electrons). It is a voltage-controlled device that has a gate terminal, which is insulated from the channel formed by the source and drain terminals.
IGBT (Insulated Gate Bipolar Transistor) is a minority carrier device as it operates mainly on the principle of controlling the flow of minority carriers (holes). It is a voltage-controlled device that combines the advantages of MOSFET and BJT (Bipolar Junction Transistor).
Diode is a minority carrier device as it conducts mainly by the flow of minority carriers (holes in N-type and electrons in P-type). It is a two-terminal device that allows current to flow in one direction only.
Thyristor is a minority carrier device as it operates mainly on the principle of controlling the flow of minority carriers (holes). It is a four-layer device that has three terminals (anode, cathode, and gate) and allows current to flow in one direction only.
Conclusion:
Thus, option D is the correct statement as MOSFET is a majority carrier device, whereas IGBT, Diode, and Thyristor are minority carrier devices.
Majority and Minority Carrier Devices:
- Majority carrier devices: Conduct electricity mainly by the flow of majority carriers (electrons in N-type and holes in P-type).
- Minority carrier devices: Conduct electricity mainly by the flow of minority carriers (holes in N-type and electrons in P-type).
Statement:
D) MOSFET is a majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.
Explanation:
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a majority carrier device as it operates mainly on the principle of controlling the flow of majority carriers (electrons). It is a voltage-controlled device that has a gate terminal, which is insulated from the channel formed by the source and drain terminals.
IGBT (Insulated Gate Bipolar Transistor) is a minority carrier device as it operates mainly on the principle of controlling the flow of minority carriers (holes). It is a voltage-controlled device that combines the advantages of MOSFET and BJT (Bipolar Junction Transistor).
Diode is a minority carrier device as it conducts mainly by the flow of minority carriers (holes in N-type and electrons in P-type). It is a two-terminal device that allows current to flow in one direction only.
Thyristor is a minority carrier device as it operates mainly on the principle of controlling the flow of minority carriers (holes). It is a four-layer device that has three terminals (anode, cathode, and gate) and allows current to flow in one direction only.
Conclusion:
Thus, option D is the correct statement as MOSFET is a majority carrier device, whereas IGBT, Diode, and Thyristor are minority carrier devices.
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor,...
BJT is bipolar thats simple , diode is also bipolar , it too has hole and electrons , now your only confusion must be on why IGBT is bipolar not unipolar although construction wise it is similar to mosfet , and operation wise too . I too had this confusion , In construction of IGBT the last layer is N+ , P , N- , P+ ) whereas that of mosfet is ( N+ , P , N- and N+ ) so you see the last layer N+ is changed with p+ , due to this change , now IGBT also has a small minority carrier conductivity , due to this reason IGBT becomes Bipolar , but Mosfet remains unipolar . And basically due to having no minority problem Mosfet turn off time is lower , recovery time is reduced which results in greater switching speed then IGBT
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer?
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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer?.
For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer?.
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ample number of questions to practice For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?a)All of the four are majority carrier devices.b)All the four are minority carrier devicesc)IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.d)MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice GATE tests.
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