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The band gap in eV of a semiconductor material required to construct an LED that emits peakpower at the wavelength of 620 nm is _______.(Plank constant h = 4. 13567 x10–15 eV s and speed of light c = 2.998 x 108 m/s).(Important - Enter only the numerical value in the answer)Correct answer is '2'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about The band gap in eV of a semiconductor material required to construct an LED that emits peakpower at the wavelength of 620 nm is _______.(Plank constant h = 4. 13567 x10–15 eV s and speed of light c = 2.998 x 108 m/s).(Important - Enter only the numerical value in the answer)Correct answer is '2'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The band gap in eV of a semiconductor material required to construct an LED that emits peakpower at the wavelength of 620 nm is _______.(Plank constant h = 4. 13567 x10–15 eV s and speed of light c = 2.998 x 108 m/s).(Important - Enter only the numerical value in the answer)Correct answer is '2'. Can you explain this answer?.

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