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Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?
- a)It is independent of temperature.
- b)It depends on the difference b/w fermi levels on two sides of junction
- c)It depends on forbidden energy -gap on two -types of semi conductors.
- d)It depends on impurity Concentration in p & n type Semi conductor.
Correct answer is option 'B,C,D'. Can you explain this answer?
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Consider the following statements regarding the magnitude of barrier p...
When a p type semiconductor having holes as majority Carriers is clamped with a n-type semiconductor having e- as majority Carriers same efrom n - side goes to p- side & same holes goes to n - side ; thus created a potential barrier. Which ;
(i) Depends on temp.
(ii) Depends on fermi level.
(iii) Forbidden Energy gap (Eg)
(iv) Majority Carriers.
thus ; correct options are (B,C,D).
(i) Depends on temp.
(ii) Depends on fermi level.
(iii) Forbidden Energy gap (Eg)
(iv) Majority Carriers.
thus ; correct options are (B,C,D).
Most Upvoted Answer
Consider the following statements regarding the magnitude of barrier p...
Junction.
b) It depends on the difference between the fermi levels on two sides of the junction.
c) It depends on the forbidden energy gap between the two types of semiconductors.
Both statements b) and c) are correct. The magnitude of the barrier potential of a p-n junction depends on the difference in the fermi levels on the p and n sides of the junction. It also depends on the forbidden energy gap between the two types of semiconductors.
b) It depends on the difference between the fermi levels on two sides of the junction.
c) It depends on the forbidden energy gap between the two types of semiconductors.
Both statements b) and c) are correct. The magnitude of the barrier potential of a p-n junction depends on the difference in the fermi levels on the p and n sides of the junction. It also depends on the forbidden energy gap between the two types of semiconductors.
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Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer?
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Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer?.
Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer?.
Solutions for Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE.
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Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer?, a detailed solution for Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? has been provided alongside types of Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider the following statements regarding the magnitude of barrier potential of a p-n junction. Which of the following statements is/are Correct ?a)It is independent of temperature.b)It depends on the difference b/w fermi levels on two sides of junctionc)It depends on forbidden energy -gap on two -types of semi conductors.d)It depends on impurity Concentration in p & n type Semi conductor.Correct answer is option 'B,C,D'. Can you explain this answer? tests, examples and also practice GATE tests.
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