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A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level by
- a)13.45 meV
- b)18.02 meV
- c)26.90 meV
- d)9.01 meV
Correct answer is option 'D'. Can you explain this answer?
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A single crystal intrinsic semiconductor is at a temperature of 300 K ...
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A single crystal intrinsic semiconductor is at a temperature of 300 K ...
Given:
- Temperature (T) = 300 K
- Effective density of states for holes (Nv) = 2 * Effective density of states for electrons (Nc)
- Thermal voltage (VT) = 26 mV
To find:
The shift of the intrinsic Fermi level from the mid-bandgap energy level.
Solution:
The shift of the intrinsic Fermi level (ΔEfi) can be calculated using the following equation:
ΔEfi = (3/4) * VT * ln(Nv/Nc)
Calculating Nc:
The density of states for electrons is given by:
Nc = 2 * (2πmkT/h^2)^(3/2)
Where,
m = effective mass of the electron
k = Boltzmann constant
h = Planck's constant
Calculating Nv:
Since Nv = 2 * Nc, we can substitute the value of Nc in the equation above to find Nv.
Calculating ΔEfi:
Using the values of Nc and Nv, we can calculate ΔEfi using the equation mentioned earlier.
Final Answer:
The calculated value of ΔEfi is approximately 9.01 meV. Therefore, the correct answer is option 'D'.
- Temperature (T) = 300 K
- Effective density of states for holes (Nv) = 2 * Effective density of states for electrons (Nc)
- Thermal voltage (VT) = 26 mV
To find:
The shift of the intrinsic Fermi level from the mid-bandgap energy level.
Solution:
The shift of the intrinsic Fermi level (ΔEfi) can be calculated using the following equation:
ΔEfi = (3/4) * VT * ln(Nv/Nc)
Calculating Nc:
The density of states for electrons is given by:
Nc = 2 * (2πmkT/h^2)^(3/2)
Where,
m = effective mass of the electron
k = Boltzmann constant
h = Planck's constant
Calculating Nv:
Since Nv = 2 * Nc, we can substitute the value of Nc in the equation above to find Nv.
Calculating ΔEfi:
Using the values of Nc and Nv, we can calculate ΔEfi using the equation mentioned earlier.
Final Answer:
The calculated value of ΔEfi is approximately 9.01 meV. Therefore, the correct answer is option 'D'.
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A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer?
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A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer?.
A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level bya)13.45 meVb)18.02 meVc)26.90 meVd)9.01 meVCorrect answer is option 'D'. Can you explain this answer?.
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