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An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer?.

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Here you can find the meaning of An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer?, a detailed solution for An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer? has been provided alongside types of An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice An intrinsic semiconductor bar of Si is doped with donor type impurity to the extent of 1 atom per 108 silicon atoms, then the resistivity of silicon crystal will be (atomic density of Si crystals =5 × 1022 atoms /cm3 and μn = 1300cm2N − sec)Correct answer is '9.61'. Can you explain this answer? tests, examples and also practice GATE tests.