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Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V?
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Calculate the width of the space charge region in a pn junction when a...
Calculation of width of space charge region in pn junction with RB'd voltage
Given:
Calculation:
Given:
- Temperature T = 300K
- Doping concentration Na = 10^16 cm^-3
- Doping concentration Nd = 10^15 cm^-3
- Intrinsic carrier concentration ni = 1.5 × 10^10 cm^-3
- RB'd voltage Vr = 5V
Calculation:
- Calculate the built-in potential V0
- V0 = (kT/q) * ln(Na*Nd/ni^2)
- q = 1.6 × 10^-19 C (charge of an electron)
- k = 1.38 × 10^-23 J/K (Boltzmann's constant)
- T = 300K (temperature)
- ni = 1.5 × 10^10 cm^-3 (intrinsic carrier concentration)
- Na = 10^16 cm^-3 (acceptor doping concentration)
- Nd = 10^15 cm^-3 (donor doping concentration)
- V0 = (1.38 × 10^-23 * 300 / 1.6 × 10^-19) * ln(10^16 * 10^15 / (1.5 × 10^10)^2)
- V0 = 0.692 V
- Calculate the depletion width W0 without any external bias
- W0 = sqrt((2 * εs * V0) / (q * (1 / Na + 1 / Nd)))
- εs = 11.8 * ε0 (permittivity of silicon)
- ε0 = 8.85 × 10^-14 F/cm (permittivity of free space)
- W0 = sqrt((2 * 11.8 * 8.85 × 10^-14 * 0.692) / (1.6 × 10^-19 * (1 / 10^16 + 1 / 10^15)))
- W0 = 0.238 μm
- Calculate the width of the space charge region W under RB'd voltage
- W = sqrt((2 * εs * (V0 - Vr)) / (q * (1 / Na + 1 / Nd)))
- W = sqrt((2 * 11.8 * 8.85 × 10^-14 * (0.692 - 5)) / (1.6 × 10^-19 * (1 / 10^16 + 1 / 10^15)))
- W = 0.241 μm
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Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V?
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Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V?.
Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Calculate the width of the space charge region in a pn junction when an RB'd voltage is applied.Consider So pn junction at T=300k with doping concentration of Na=10^16cm^-3 ,Nd=10^15cm^-3,ni=1.5×10^10cm^-3,Vr=5V?.
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