Question Description
For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared
according to
the Electronics and Communication Engineering (ECE) exam syllabus. Information about For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam.
Find important definitions, questions, meanings, examples, exercises and tests below for For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer?.
Solutions for For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.
Here you can find the meaning of For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer?, a detailed solution for For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? has been provided alongside types of For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.