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For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will become
  • a)
    2.8mA
  • b)
    2 mA
  • c)
    1.4mA
  • d)
    1mA
Correct answer is option 'C'. Can you explain this answer?
Most Upvoted Answer
For the n-channel enhancement MOSFET shown in the given figure, Thres...
ID=K(VGS-V(E(th)2
4mA=K(VGS-2)2
Here VGS=10-4×1=6
∴4=k(6-2)2
K= 4/16=¼
When RD is increased to 4kΩ.
VGS=10-4ID
Now ID= 4/16(10-4ID-2)2
Solving the above equation for ID we will get
ID =2.8 mA and ID =1.4 mA and
but ID can not be 2.8 mA as VGS becomes negative so,
ID =1.4 mA
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For the n-channel enhancement MOSFET shown in the given figure, Threshold voltage Vtn=2V,The drain current ID of the MOSFET is 4mA when drain resistance RD is 1kΩ, If value of RD is increase to 4kΩ, then drain current ID will becomea)2.8mAb)2 mAc)1.4mAd)1mACorrect answer is option 'C'. Can you explain this answer?
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