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Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.Correct answer is '4000'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared
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Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.Correct answer is '4000'. Can you explain this answer?, a detailed solution for Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.Correct answer is '4000'. Can you explain this answer? has been provided alongside types of Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.Correct answer is '4000'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.Correct answer is '4000'. Can you explain this answer? tests, examples and also practice GATE tests.