Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer?

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Assume electronic charge q = 1.6×10⁻¹⁹C, kT/q = 25mV and electron mobility μ_n = 1000cm²/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×10²¹ cm⁴, the magnitude of electron diffusion current density (in A/cm²) is _________.

a)
2000 A/cm²
b)
4000 A/cm²
c)
6000 A/cm²
d)
8000 A/cm²

Correct answer is option 'B'. Can you explain this answer?

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Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________. Correct answer is '4000'. Can you explain this answer?

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As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________. Correct answer is between '15.9,16.1'. Can you explain this answer?

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A silicon sample is uniformly doped with donor type impurities with a concentration of1016 / cm3 . The electron and hole mobilities in the sample are1200cm3 / V-s and 400cm2 / V-s respectively. Assume complete ionization of impurities.The charge of an electron is 1.6x 10-19 C. The resistivity of the sample (in ?- cm)is _____________. Correct answer is '0.52'. Can you explain this answer?

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The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of and electronic charge If a bias of 5V is applied across a 1 m region of this semiconductor, the resulting current density in this region, in kA/cm2, is _________. Correct answer is between '1.5,1.7'. Can you explain this answer?

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Optical excitation of intrinsic Germanium creates an average density of 1018 conduction electrons per m3 in the material at liquid nitrogen temperature. At this temperature electrons and holes mobilities are equal.μ = 0.5 x 104cm2/volts sec and Germanium dielectric constant is 20. The diffusion coefficient for electron is

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Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer?

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