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Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer?.

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Here you can find the meaning of Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer?, a detailed solution for Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? has been provided alongside types of Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? tests, examples and also practice GATE tests.