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As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer?.

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Here you can find the meaning of As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer?, a detailed solution for As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer? has been provided alongside types of As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentrationND= 1016 cm-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of where Hole lifetime is 10-4 s,electronic charge hole diffusion coefficient and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is between '15.9,16.1'. Can you explain this answer? tests, examples and also practice GATE tests.