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Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer?.

Solutions for Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer?, a detailed solution for Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? has been provided alongside types of Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5x1016 cm-3illuminated uniformly such that the optical generation rate is Gopt = 1.5 x1020 cm-3s-1 through outthe sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid andignore surface effects. The carrier lifetimes are po = 0.1 and no = 0.5 ?s.The hole concentration at t = 0 and the hole concentration at t = 0.3 μs, respectively, area)1.5x 1013 cm-3 and 7.47 x1011 cm-3b)1.5x 1013 cm-3 and 8.23x1011 cm-3c)7.5x 1013 cm-3 and 3.73x1011 cm-3d)7.5x 1013 cm-3 and 4.12 x1011 cm-3Correct answer is option 'C'. Can you explain this answer? tests, examples and also practice GATE tests.