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A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm-1on p- side & 1.6 ohm-1 cm-1 on n-side. Calculate potential barrier at 300K (in V). (ni = 2.1 x 1013 cm-1) (Given μp = 2000 cm2/volt-sec and μn = 4000 cm2/volt-sec) (K = 1.38 x 10-16 erg per °K)
Correct answer is '0.2467'. Can you explain this answer?
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A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm...
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A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm...
And 1.2 ohm-1 cm-1 on n-side. The junction has an area of 0.5 cm2 and the potential barrier is 0.3 V. Determine the current flowing through the junction when a forward bias of 0.4 V is applied.
To determine the current flowing through the junction, we can use the diode equation:
I = Is * (e^(Vd/Vt) - 1)
Where:
I is the current flowing through the junction
Is is the reverse saturation current
Vd is the voltage across the junction
Vt is the thermal voltage, which is approximately 0.026 V at room temperature
First, we need to calculate the reverse saturation current (Is) using the area and conductivity of the junction.
Is = (qnDpAp + qnDnAn) / 2
Where:
q is the charge of an electron (1.6 * 10^-19 C)
Dp and Dn are the diffusion coefficients of holes and electrons, respectively
Ap and An are the cross-sectional areas of the p-side and n-side, respectively
Assuming the diffusion coefficients are equal, and using the given values:
Dp = Dn = 1 cm2/s
Ap = An = 0.5 cm2
Is = (1.6 * 10^-19 C * 1 cm2/s * 0.8 ohm-1 cm-1 * 0.5 cm2 + 1.6 * 10^-19 C * 1 cm2/s * 1.2 ohm-1 cm-1 * 0.5 cm2) / 2
= (0.4 * 10^-19 C + 0.6 * 10^-19 C) / 2
= 0.5 * 10^-19 C
Next, we can calculate the current (I) using the forward bias voltage (Vd = 0.4 V) and the thermal voltage (Vt = 0.026 V).
I = (0.5 * 10^-19 C) * (e^(0.4 V/0.026 V) - 1)
≈ (0.5 * 10^-19 C) * (e^15.385 - 1)
≈ (0.5 * 10^-19 C) * (4.8 * 10^6 - 1)
≈ (0.5 * 10^-19 C) * (4.8 * 10^6)
≈ 2.4 * 10^-13 A
Therefore, the current flowing through the junction when a forward bias of 0.4 V is applied is approximately 2.4 * 10^-13 A.
To determine the current flowing through the junction, we can use the diode equation:
I = Is * (e^(Vd/Vt) - 1)
Where:
I is the current flowing through the junction
Is is the reverse saturation current
Vd is the voltage across the junction
Vt is the thermal voltage, which is approximately 0.026 V at room temperature
First, we need to calculate the reverse saturation current (Is) using the area and conductivity of the junction.
Is = (qnDpAp + qnDnAn) / 2
Where:
q is the charge of an electron (1.6 * 10^-19 C)
Dp and Dn are the diffusion coefficients of holes and electrons, respectively
Ap and An are the cross-sectional areas of the p-side and n-side, respectively
Assuming the diffusion coefficients are equal, and using the given values:
Dp = Dn = 1 cm2/s
Ap = An = 0.5 cm2
Is = (1.6 * 10^-19 C * 1 cm2/s * 0.8 ohm-1 cm-1 * 0.5 cm2 + 1.6 * 10^-19 C * 1 cm2/s * 1.2 ohm-1 cm-1 * 0.5 cm2) / 2
= (0.4 * 10^-19 C + 0.6 * 10^-19 C) / 2
= 0.5 * 10^-19 C
Next, we can calculate the current (I) using the forward bias voltage (Vd = 0.4 V) and the thermal voltage (Vt = 0.026 V).
I = (0.5 * 10^-19 C) * (e^(0.4 V/0.026 V) - 1)
≈ (0.5 * 10^-19 C) * (e^15.385 - 1)
≈ (0.5 * 10^-19 C) * (4.8 * 10^6 - 1)
≈ (0.5 * 10^-19 C) * (4.8 * 10^6)
≈ 2.4 * 10^-13 A
Therefore, the current flowing through the junction when a forward bias of 0.4 V is applied is approximately 2.4 * 10^-13 A.
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A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm-1on p- side & 1.6 ohm-1 cm-1on n-side. Calculate potential barrier at 300K (in V). (ni= 2.1 x 1013 cm-1) (Given μp = 2000 cm2/volt-sec and μn = 4000 cm2/volt-sec) (K = 1.38 x 10-16 erg per °K)Correct answer is '0.2467'. Can you explain this answer?
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A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm-1on p- side & 1.6 ohm-1 cm-1on n-side. Calculate potential barrier at 300K (in V). (ni= 2.1 x 1013 cm-1) (Given μp = 2000 cm2/volt-sec and μn = 4000 cm2/volt-sec) (K = 1.38 x 10-16 erg per °K)Correct answer is '0.2467'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm-1on p- side & 1.6 ohm-1 cm-1on n-side. Calculate potential barrier at 300K (in V). (ni= 2.1 x 1013 cm-1) (Given μp = 2000 cm2/volt-sec and μn = 4000 cm2/volt-sec) (K = 1.38 x 10-16 erg per °K)Correct answer is '0.2467'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A p - n junction is formed from germanium of conductivity 0.8 ohm-1 cm-1on p- side & 1.6 ohm-1 cm-1on n-side. Calculate potential barrier at 300K (in V). (ni= 2.1 x 1013 cm-1) (Given μp = 2000 cm2/volt-sec and μn = 4000 cm2/volt-sec) (K = 1.38 x 10-16 erg per °K)Correct answer is '0.2467'. Can you explain this answer?.
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