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Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared
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the GATE exam syllabus. Information about Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam.
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Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer?, a detailed solution for Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? has been provided alongside types of Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Assume electronic charge q = 1.6×10−19C, kT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021 cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.a)2000 A/cm2b)4000 A/cm2c)6000 A/cm2d)8000 A/cm2Correct answer is option 'B'. Can you explain this answer? tests, examples and also practice GATE tests.