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Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? for GATE 2024 is part of GATE preparation. The Question and answers have been prepared according to the GATE exam syllabus. Information about Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for GATE 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer?.

Solutions for Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for GATE. Download more important topics, notes, lectures and mock test series for GATE Exam by signing up for free.

Here you can find the meaning of Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer?, a detailed solution for Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? has been provided alongside types of Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of kT/q to be 25 mV at 300 KCompared to undoped silicon, the Fermi level of doped silicon?a)Goes down by 0.13eVb)Goes up by 0.13eVc)Goes down by 0.427eVd)Goes up by 0.427eVCorrect answer is option 'C'. Can you explain this answer? tests, examples and also practice GATE tests.